Ultrathin fluorite nanobilayer films with excellent ferroelectricity for high-density memory applications
简介：The strategy of nanolaminates has been shown to significantly optimize the electrical properties and reliability of fluorite HfO2-ZrO2 ferroelectric thin films.However,HfO2-ZrO2 nanolaminates typically ex-hibit low ferroelectric polarization,which severely limits their application in high-performance ferroelec-tric memory devices.In this work,strong and reliable ferroelectricity in equal thick ZrO2/Hf0.5Zr0.5O2(ZO/HZO)nanobilayer films has been successfully achieved using post-deposition annealing(PDA)process.Compared to the HZO(15)solid solution film,the 2Pr(Double remanent polarization)value of ZO/HZO(7.5/7.5)nanobilayer film increases by 87％to 68.6 μC/cm2.The experimental results indicate that the pronounced ferroelectric phase transition is attributed to significant in-plane tensile stress within ZO/HZO nanobilayer films and surface energy effects caused by the decrease of grain size.Moreover,the nanobi-layer structure also demonstrates superior scalability,with all the 6-21 nm thick ZO/HZO nanobilayer films possessing large 2Pr values above 56.0 μC/cm2.In particular,the 6 nm thick ZO/HZO(3/3)nanobi-layer film achieves a ultra-high remanent polarization(2Pr≈65.1 μC/cm2)while exhibiting excellent fa-tigue endurance(1010 cycles)and uniformity(Δ2Pr/2Pr,max＜6.5％).This study opens up the possibility of developing high-performance and reliable high-density ferroelectric memory devices.展开
学者：LEILiuChengfengJIANGXiYuanYanZhangHaiyanChenDou
关键词：NanolaminatesZrO2/Hf0.5Zr0.5O2 nanobilayerFerroelectricityScalabilityuniformityUltrathin ferroelectric material
分类号：TP311.133(计算技术、计算机技术)
在线出版日期：2026-01-27 （网站首发日期）
