Ultra-low-voltage operation,large ferroelectric polarization,fast switching speed,and high endurance of 450℃ processed HZO thin films by starting-layer engineering
简介：The low-temperature processed(≤ 450 ℃)HfO2-based ferroelectric thin films(FE-HfO2)bring about un-precedented possibilities of implementing ultra-low-power computing and electronic systems due to the capability of back-end-of-line(BEOL)embedded integration.Nevertheless,the FE-HfO2 continues to face significant challenges,including small polarization,slow switching speed,and poor endurance at low operating voltages.Here we report a breakthrough in 5-nm-thick Hf0.5Zr0.5O2(HZO)film fabricated at 450 ℃ through an innovative ZrO2-starting atomic layer deposition process,achieving unprecedented si-multaneous improvements in polarization,switching speed,and endurance properties.Through compre-hensive in-situ high-temperature X-ray diffraction analysis and pulse switching experiments,we elucidate that these enhancements stem from the reduced crystallization temperature and the optimized interfacial layer.Remarkably,the HZO films exhibit state-of-the-art performance metrics at ultralow operating volt-ages(0.9-1.6 V),featuring a substantial remanent polarization(Pr)of 19.6 μC/cm2,fast operation speed(＜100 ns),and exceptional endurance exceeding 5 × 109 cycles with minimal polarization degradation(20％2Pr loss).This work represents a pivotal advancement toward the realization of high-performance,high-density,and BEOL-compatible ferroelectric devices for next-generation computing applications.展开
学者：JintaiLiuBinjianZengQijunYangZhibinTaoYuChangfanJuShuaizhiZhengQiangxiangPENGYichunZhouQiongMinLIAO
关键词：BEOL-embedded integrationFerroelectric thin filmsHZO thin filmsPolarization switching speedEndurance
在线出版日期：2026-01-27 （网站首发日期）
