A direct brazing approach to low-warpage,high-thermal-efficiency Cu/Si3N4/Cu substrates for power electronics
简介：Direct brazing was employed to fabricate a"Cu circuit layer-Si₃N₄ ceramic-Cu heat sink"structure for power electronic devices,enabling a shortened heat dissipation path and enhanced thermal management.Structural components(60 mm×60 mm and 30 mm×30 mm)were brazed at 780 ℃ for 20 min to simulate finless and finned heat sinks.The effects of composite brazing filler metal and copper underlayer stiffness on warpage and thermal resistance were systematically evaluated.The results show that composite fillers effectively suppressed warpage,reducing deformation in a 60×60 mm²-finned component from 0.95%to 0.73%,with a measured thermal resistance of 0.1936 K/W.After surface soldering of the insulated gate bipolar transistor(IGBT),the total thermal resistance from junction to ambient decreased by 10.2%compared with conventional structures.This study demonstrates a practical route to improve heat dissipation and optimize the thermal design of high-power modules,providing an industry-ready thermal management solution for high-power-density SiC/GaN devices.展开
学者：YingWangZiyuLiuMiaomiaoFangHANShiyuNiuZhenwenYang
关键词：Si3N4 ceramicsActive metal brazingwarpagethermal resistanceFinless and finned heat sinks
在线出版日期：2026-04-10 （网站首发日期）
